Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	IRL40B212	Infineon Technologies, N-Channel 40V 195A (Tc) 231W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	FDMS8026S	ON Semiconductor, N-Channel 30V 19A (Ta), 22A (Tc) 2.5W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	FDD6N50TM-WS	ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, UniFET™	View
	FDD5612	ON Semiconductor, N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3, PowerTrench®	View
	IRFHM8326TRPBF	Infineon Technologies, N-Channel 30V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface Mount, HEXFET®	View
	STI270N4F3	STMicroelectronics, N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, STripFET™ III	View
	SUP70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®	View
	PHP79NQ08LT,127	Nexperia USA Inc., N-Channel 75V 73A (Tc) 157W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	SI7848BDP-T1-GE3	Vishay Siliconix, N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PMF370XN,115	Nexperia USA Inc., N-Channel 30V 870mA (Tc) 560mW (Tc) Surface Mount SC-70, TrenchMOS™	View
	STP11NM60ND	STMicroelectronics, N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB, FDmesh™ II	View
	NTMFS5C673NLT1G	ON Semiconductor, N-Channel 60V 3.6W (Ta), 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales