Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	BUK9Y12-40E,115	Nexperia USA Inc., N-Channel 40V 52A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	STL36N55M5	STMicroelectronics, N-Channel 550V 22.5A (Tc) 2.8W (Ta), 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V	View
	FDPF33N25TRDTU	ON Semiconductor, N-Channel 250V 37W (Tc) Through Hole TO-220F (LG-Formed),	View
	NTF3055L108T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	STB85NF55LT4	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	SSM6K211FE,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII	View
	BSS138K	ON Semiconductor, N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	NTHS5404T1G	ON Semiconductor, N-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount ChipFET™,	View
	BSH103,215	Nexperia USA Inc., N-Channel 30V 850mA (Ta) 540mW (Ta) Surface Mount TO-236AB,	View
	PMV28UNEAR	Nexperia USA Inc., N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	IRF2807ZSTRLPBF	Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD13380F3T	Texas Instruments, N-Channel 12V 3.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales