SIHB12N60ET1-GE3
SIHB12N60ET1-GE3
Part Number SIHB12N60ET1-GE3 Description MOSFET N-CH 600V 12A TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D²Pak)
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SIHB12N60ET1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package 800 Manufacturer Vishay Siliconix Series E Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 937pF @ 100V FET Feature - Power Dissipation (Max) 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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