Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB22N65E-GE3

SIHB22N65E-GE3

SIHB22N65E-GE3

Part NumberSIHB22N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 22A D2PAK

DatasheetSIHB22N65E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB22N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB22N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB22N65E-GE3.
We are offering SIHB22N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB22N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB22N65E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2415pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB22N65E-GE3 - Related Products

	IXFK44N60	IXYS, N-Channel 600V 44A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	FDB2614	ON Semiconductor, N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®	View
	SUM70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FQP4N20L	ON Semiconductor, N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3, QFET®	View
	TSM8N80CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 8A (Tc) 40.3W (Tc) Through Hole ITO-220AB,	View
	BSC500N20NS3GATMA1	Infineon Technologies, N-Channel 200V 24A (Tc) 96W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IRF3415STRLPBF	Infineon Technologies, N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	BSZ0902NSATMA1	Infineon Technologies, N-Channel 30V 19A (Ta), 40A (Tc) 2.1W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	SIHG22N60AE-GE3	Vishay Siliconix, N-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-247AC,	View
	IPB60R060C7ATMA1	Infineon Technologies, N-Channel 650V 35A (Tc) 162W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7	View
	STL4N10F7	STMicroelectronics, N-Channel 100V 4.5A (Ta), 18A (Tc) 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), DeepGATE™, STripFET™ VII	View
	SSM6K202FE,LF	Toshiba Semiconductor and Storage, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6),	View

SIHB22N65E-GE3 - Tags

SIHB22N65E-GE3 SIHB22N65E-GE3 PDF SIHB22N65E-GE3 datasheet SIHB22N65E-GE3 specification SIHB22N65E-GE3 image SIHB22N65E-GE3 India Renesas Electronics India SIHB22N65E-GE3 buy SIHB22N65E-GE3 SIHB22N65E-GE3 price SIHB22N65E-GE3 distributor SIHB22N65E-GE3 supplier SIHB22N65E-GE3 wholesales