Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

Part NumberSIHB33N60ET1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 33A TO263

DatasheetSiHB33N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SIHB33N60ET1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB33N60ET1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB33N60ET1-GE3.
We are offering SIHB33N60ET1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB33N60ET1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB33N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB33N60ET1-GE3 - Related Products

	IXFP36N20X3M	IXYS, N-Channel 200V 36A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™	View
	SK8403170L	Panasonic Electronic Components, N-Channel 30V 16A (Ta), 59A (Tc) 2W (Ta), 24.6W (Tc) Surface Mount HSSO8-F1-B,	View
	DMN55D0UT-7	Diodes Incorporated, N-Channel 50V 160mA (Ta) 200mW (Ta) Surface Mount SOT-523,	View
	FDD6N50TM-F085	ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101	View
	NDP6060L	ON Semiconductor, N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-220-3,	View
	PSMN057-200B,118	Nexperia USA Inc., N-Channel 200V 39A (Tc) 250W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	SUM110N10-09-E3	Vishay Siliconix, N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FDP8874	ON Semiconductor, N-Channel 30V 16A (Ta), 114A (Tc) 110W (Tc) Through Hole TO-220-3, PowerTrench®	View
	RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	IRFR220TRPBF	Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	STP100N6F7	STMicroelectronics, N-Channel 60V 100A (Tc) 125W (Tc) Through Hole TO-220, STripFET™ F7	View
	BSS123WQ-7-F	Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View

SIHB33N60ET1-GE3 - Tags

SIHB33N60ET1-GE3 SIHB33N60ET1-GE3 PDF SIHB33N60ET1-GE3 datasheet SIHB33N60ET1-GE3 specification SIHB33N60ET1-GE3 image SIHB33N60ET1-GE3 India Renesas Electronics India SIHB33N60ET1-GE3 buy SIHB33N60ET1-GE3 SIHB33N60ET1-GE3 price SIHB33N60ET1-GE3 distributor SIHB33N60ET1-GE3 supplier SIHB33N60ET1-GE3 wholesales