Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB35N60E-GE3

SIHB35N60E-GE3

SIHB35N60E-GE3

Part NumberSIHB35N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 32A D2PAK TO263

DatasheetSIHB35N60E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB35N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB35N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB35N60E-GE3.
We are offering SIHB35N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB35N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB35N60E-GE3
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	132nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2760pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB35N60E-GE3 - Related Products

	R8010ANX	Rohm Semiconductor, N-Channel 800V 10A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	IRFRC20TRRPBF	Vishay Siliconix, N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	FDD120AN15A0-F085	ON Semiconductor, N-Channel 150V 14A (Tc) 65W (Tc) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	APT10021JLL	Microsemi Corporation, N-Channel 1000V 37A (Tc) 694W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®	View
	IRFR220NTRLPBF	Infineon Technologies, N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPP12CN10LGXKSA1	Infineon Technologies, N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	IAUT300N08S5N012ATMA2	Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	SI8816EDB-T2-E1	Vishay Siliconix, N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IRF1324PBF	Infineon Technologies, N-Channel 24V 195A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	AOTF286L	Alpha & Omega Semiconductor Inc., N-Channel 80V 13.5A (Ta), 56A (Tc) 2.2W (Ta), 37.5W (Tc) Through Hole TO-220-3F,	View
	FDP2710	ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-220-3, PowerTrench®	View
	FQB50N06LTM	ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View

SIHB35N60E-GE3 - Tags

SIHB35N60E-GE3 SIHB35N60E-GE3 PDF SIHB35N60E-GE3 datasheet SIHB35N60E-GE3 specification SIHB35N60E-GE3 image SIHB35N60E-GE3 India Renesas Electronics India SIHB35N60E-GE3 buy SIHB35N60E-GE3 SIHB35N60E-GE3 price SIHB35N60E-GE3 distributor SIHB35N60E-GE3 supplier SIHB35N60E-GE3 wholesales