Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB35N60E-GE3

SIHB35N60E-GE3

SIHB35N60E-GE3

Part NumberSIHB35N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 32A D2PAK TO263

DatasheetSIHB35N60E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB35N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB35N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB35N60E-GE3.
We are offering SIHB35N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB35N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB35N60E-GE3
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	132nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2760pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB35N60E-GE3 - Related Products

	BSC070N10NS3GATMA1	Infineon Technologies, N-Channel 100V 90A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	STW25N80K5	STMicroelectronics, N-Channel 800V 19.5A (Tc) 250W (Tc) Through Hole TO-247, SuperMESH5™	View
	IPD040N03LGATMA1	Infineon Technologies, N-Channel 30V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	IRFH8337TRPBF	Infineon Technologies, N-Channel 30V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6), HEXFET®	View
	NTR4003NT3G	ON Semiconductor, N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	IRFP4321PBF	Infineon Technologies, N-Channel 150V 78A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®	View
	CSD16323Q3	Texas Instruments, N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	STD12N50M2	STMicroelectronics, N-Channel 500V 10A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	STB26N60M2	STMicroelectronics, N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	FDMC3612	ON Semiconductor, N-Channel 100V 3.3A (Ta), 16A (Tc) 2.3W (Ta), 35W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	2N7002BKM,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006-3, Automotive, AEC-Q101, TrenchMOS™	View
	STW26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II	View

SIHB35N60E-GE3 - Tags

SIHB35N60E-GE3 SIHB35N60E-GE3 PDF SIHB35N60E-GE3 datasheet SIHB35N60E-GE3 specification SIHB35N60E-GE3 image SIHB35N60E-GE3 India Renesas Electronics India SIHB35N60E-GE3 buy SIHB35N60E-GE3 SIHB35N60E-GE3 price SIHB35N60E-GE3 distributor SIHB35N60E-GE3 supplier SIHB35N60E-GE3 wholesales