Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD12N50E-GE3

SIHD12N50E-GE3

SIHD12N50E-GE3

Part NumberSIHD12N50E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 500V DPAK

DatasheetSIHD12N50E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA)

To learn about the specification of SIHD12N50E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD12N50E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD12N50E-GE3.
We are offering SIHD12N50E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD12N50E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD12N50E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 100V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD12N50E-GE3 - Related Products

	SI7308DN-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SQJ444EP-T1_GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IPD60R1K5CEAUMA1	Infineon Technologies, N-Channel 650V 5A (Tc) 49W (Tc) Surface Mount PG-TO252, CoolMOS™	View
	IRF540SPBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263),	View
	IRFBC30PBF	Vishay Siliconix, N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	AON7508	Alpha & Omega Semiconductor Inc., N-Channel 30V 26A (Ta), 32A (Tc) 3.1W (Ta), 62.5W (Tc) Surface Mount 8-DFN (3x3),	View
	ZXMN6A08E6TA	Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	AUIRF7749L2TR	Infineon Technologies, N-Channel 60V 36A (Ta), 345A (Tc) 3.8W (Ta), 341W (Tc) Surface Mount DIRECTFET L8, Automotive, AEC-Q101, OptiMOS™	View
	FDB031N08	ON Semiconductor, N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK, PowerTrench®	View
	STB20N65M5	STMicroelectronics, N-Channel 650V 18A (Tc) 130W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	SIHP4N80E-GE3	Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB,	View
	SSM3K2615TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount UFM, π-MOSV	View

SIHD12N50E-GE3 - Tags

SIHD12N50E-GE3 SIHD12N50E-GE3 PDF SIHD12N50E-GE3 datasheet SIHD12N50E-GE3 specification SIHD12N50E-GE3 image SIHD12N50E-GE3 India Renesas Electronics India SIHD12N50E-GE3 buy SIHD12N50E-GE3 SIHD12N50E-GE3 price SIHD12N50E-GE3 distributor SIHD12N50E-GE3 supplier SIHD12N50E-GE3 wholesales