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SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

Part NumberSIHD1K4N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH DPAK TO-252

DatasheetSIHD1K4N60E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 4.2A (Tc) 63W (Tc) Surface Mount TO-252AA

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SIHD1K4N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD1K4N60E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	172pF @ 100V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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