Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD2N80E-GE3

SIHD2N80E-GE3

SIHD2N80E-GE3

Part NumberSIHD2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 2.8A DPAK

DatasheetSIHD2N80E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA)

To learn about the specification of SIHD2N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD2N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD2N80E-GE3.
We are offering SIHD2N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD2N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD2N80E-GE3 - Related Products

	STL180N6F7	STMicroelectronics, N-Channel 60V 32A (Ta), 120A (Tc) 4.8W (Ta), 166W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	AO3418	Alpha & Omega Semiconductor Inc., N-Channel 30V 3.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SIHA22N60AE-E3	Vishay Siliconix, N-Channel 600V 20A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,	View
	FDC8886	ON Semiconductor, N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	FDB045AN08A0	ON Semiconductor, N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK, PowerTrench®	View
	SN7002NH6327XTSA2	Infineon Technologies, N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, SIPMOS®	View
	STP7NK80ZFP	STMicroelectronics, N-Channel 800V 5.2A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH™	View
	IRLH5034TRPBF	Infineon Technologies, N-Channel 40V 29A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	SI4058DY-T1-GE3	Vishay Siliconix, N-Channel 100V 10.3A (Tc) 5.6W (Tc) Surface Mount 8-SOIC,	View
	IRFS7430TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™	View
	SI7478DP-T1-GE3	Vishay Siliconix, N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMT6009LFG-7	Diodes Incorporated, N-Channel 60V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W (Tc) Surface Mount PowerDI3333-8,	View

SIHD2N80E-GE3 - Tags

SIHD2N80E-GE3 SIHD2N80E-GE3 PDF SIHD2N80E-GE3 datasheet SIHD2N80E-GE3 specification SIHD2N80E-GE3 image SIHD2N80E-GE3 India Renesas Electronics India SIHD2N80E-GE3 buy SIHD2N80E-GE3 SIHD2N80E-GE3 price SIHD2N80E-GE3 distributor SIHD2N80E-GE3 supplier SIHD2N80E-GE3 wholesales