SIHD3N50D-E3
SIHD3N50D-E3
Part Number SIHD3N50D-E3
Description MOSFET N-CH 500V 3A TO252 DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount D-PAK (TO-252AA)
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SIHD3N50D-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHD3N50D
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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