SIHD3N50D-E3
SIHD3N50D-E3
Part Number SIHD3N50D-E3 Description MOSFET N-CH 500V 3A TO252 DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount D-PAK (TO-252AA)
To learn about the specification of SIHD3N50D-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD3N50D-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD3N50D-E3.
We are offering SIHD3N50D-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHD3N50D-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHD3N50D Standard Package 3000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V FET Feature - Power Dissipation (Max) 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIHD3N50D-E3 - Related ProductsMore >>
IXFP16N60P3 IXYS, N-Channel 600V 16A (Tc) 347W (Tc) Through Hole TO-220, HiPerFET™
View
TK22A10N1,S4X Toshiba Semiconductor and Storage, N-Channel 100V 22A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
IRF3710ZLPBF Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-262, HEXFET®
View
SSM3K7002KFU,LF Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSVII-H
View
IRFR014TRLPBF Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
View
DN1509N8-G Microchip Technology, N-Channel 90V 360mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
PSMN1R1-30PL,127 Nexperia USA Inc., N-Channel 30V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
View
ZVN4525E6TA Diodes Incorporated, N-Channel 250V 230mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
NTTFS4C10NTWG ON Semiconductor, N-Channel 30V 8.2A (Ta), 44A (Tc) 790mW (Ta), 23.6W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
TSM5NC50CP ROG Taiwan Semiconductor Corporation, N-Channel 500V 5A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
View
IPW80R360P7XKSA1 Infineon Technologies, N-Channel 800V 13A (Tc) 84W (Tc) Through Hole PG-TO247-3-41, CoolMOS™ P7
View
ZVN3306FTA Diodes Incorporated, N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,
View
SIHD3N50D-E3 - Tags
English
