SIHF7N60E-GE3

Part NumberSIHF7N60E-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHF7N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 100V
FET Feature	-
Power Dissipation (Max)	31W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack

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FDMS8025S	ON Semiconductor, N-Channel 30V 24A (Ta), 49A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
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R6046FNZ1C9	Rohm Semiconductor, N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247,	View
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