Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG11N80E-GE3

SIHG11N80E-GE3

SIHG11N80E-GE3

Part NumberSIHG11N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 12A TO247AC

DatasheetSIHG11N80E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG11N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG11N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG11N80E-GE3.
We are offering SIHG11N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG11N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG11N80E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG11N80E-GE3 - Related Products

	IXFK64N60P3	IXYS, N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™	View
	SQD50N04-5M6_T4GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	STD25NF10LA	STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	STP3NK90Z	STMicroelectronics, N-Channel 900V 3A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH™	View
	BUK9Y27-40B,115	Nexperia USA Inc., N-Channel 40V 34A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	PSMN2R6-40YS,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	CSD19534KCS	Texas Instruments, N-Channel 100V 100A (Ta) 118W (Tc) Through Hole TO-220-3, NexFET™	View
	2N7002AQ-7	Diodes Incorporated, N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	SIDR392DP-T1-GE3	Vishay Siliconix, N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	PHB45NQ15T,118	Nexperia USA Inc., N-Channel 150V 45.1A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	IRF7805TRPBF	Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IPD90N04S402ATMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™	View

SIHG11N80E-GE3 - Tags

SIHG11N80E-GE3 SIHG11N80E-GE3 PDF SIHG11N80E-GE3 datasheet SIHG11N80E-GE3 specification SIHG11N80E-GE3 image SIHG11N80E-GE3 India Renesas Electronics India SIHG11N80E-GE3 buy SIHG11N80E-GE3 SIHG11N80E-GE3 price SIHG11N80E-GE3 distributor SIHG11N80E-GE3 supplier SIHG11N80E-GE3 wholesales