SIHG11N80E-GE3
SIHG11N80E-GE3
Part Number SIHG11N80E-GE3 Description MOSFET N-CH 800V 12A TO247AC Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-247AC
To learn about the specification of SIHG11N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG11N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG11N80E-GE3.
We are offering SIHG11N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHG11N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHG11N80E Standard Package 500 Manufacturer Vishay Siliconix Series E Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V FET Feature - Power Dissipation (Max) 179W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3
SIHG11N80E-GE3 - Related ProductsMore >>
2N7002 ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23 (TO-236AB),
View
TK25E60X,S1X Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV-H
View
STI57N65M5 STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Through Hole I2PAK (TO-262), MDmesh™ V
View
IPP65R045C7XKSA1 Infineon Technologies, N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7
View
SQD100N02-3M5L_GE3 Vishay Siliconix, N-Channel 20V 100A (Tc) 83W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
View
IRF7476TRPBF Infineon Technologies, N-Channel 12V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
FDS6680A ON Semiconductor, N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
2N7002K-T1-GE3 Vishay Siliconix, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236, TrenchFET®
View
R6009JNXC7G Rohm Semiconductor, N-Channel 600V 9A (Tc) 53W (Tc) Through Hole TO-220FM,
View
SIS888DN-T1-GE3 Vishay Siliconix, N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), ThunderFET®
View
DMG4496SSS-13 Diodes Incorporated, N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-SOP,
View
SI2302CDS-T1-E3 Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SIHG11N80E-GE3 - Tags
English
