Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG11N80E-GE3

SIHG11N80E-GE3

SIHG11N80E-GE3

Part NumberSIHG11N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 12A TO247AC

DatasheetSIHG11N80E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG11N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG11N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG11N80E-GE3.
We are offering SIHG11N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG11N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG11N80E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG11N80E-GE3 - Related Products

	TSM120N06LCS RLG	Taiwan Semiconductor Corporation, N-Channel 60V 23A (Tc) 12.5W (Tc) Surface Mount 8-SOP,	View
	SQS460EN-T1_GE3	Vishay Siliconix, N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	PSMN050-80BS,118	Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,	View
	IRF8010PBF	Infineon Technologies, N-Channel 100V 80A (Tc) 260W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM060N03CP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 70A (Tc) 54W (Tc) Surface Mount TO-252, (D-Pak),	View
	DN1509K1-G	Microchip Technology, N-Channel 90V 200mA (Tj) 490mW (Ta) Surface Mount SOT-23-5,	View
	TPW1R306PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H	View
	NVMFS5C404NLAFT1G	ON Semiconductor, N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	FDB3632-F085	ON Semiconductor, N-Channel 100V 12A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	SSM3K361R,LF	Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H	View
	CPH6444-TL-W	ON Semiconductor, N-Channel 60V 4.5A (Ta) 1.6W (Ta) Surface Mount 6-CPH,	View
	IPW60R170CFD7XKSA1	Infineon Technologies, N-Channel 650V 14A (Tc) 75W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7	View

SIHG11N80E-GE3 - Tags

SIHG11N80E-GE3 SIHG11N80E-GE3 PDF SIHG11N80E-GE3 datasheet SIHG11N80E-GE3 specification SIHG11N80E-GE3 image SIHG11N80E-GE3 India Renesas Electronics India SIHG11N80E-GE3 buy SIHG11N80E-GE3 SIHG11N80E-GE3 price SIHG11N80E-GE3 distributor SIHG11N80E-GE3 supplier SIHG11N80E-GE3 wholesales