Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG22N60AE-GE3

SIHG22N60AE-GE3

SIHG22N60AE-GE3

Part NumberSIHG22N60AE-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 20A TO247AC

DatasheetSIHG22N60AE

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG22N60AE-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG22N60AE-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG22N60AE-GE3.
We are offering SIHG22N60AE-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG22N60AE-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG22N60AE
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1451pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG22N60AE-GE3 - Related Products

	IPD135N03LGATMA1	Infineon Technologies, N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	FDPF39N20	ON Semiconductor, N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™	View
	BSC016N06NSTATMA1	Infineon Technologies, N-Channel 60V 31A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™	View
	NTTFS5C670NLTAG	ON Semiconductor, N-Channel 60V 16A (Ta), 70A (Tc) 3.2W (Ta), 63W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	AUIRFS3107TRL	Infineon Technologies, N-Channel 75V 195A (Tc) 370W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, HEXFET®	View
	PSMN3R3-40YS,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDMS0310AS	ON Semiconductor, N-Channel 30V 19A (Ta), 22A (Tc) 2.5W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	STF4N80K5	STMicroelectronics, N-Channel 800V 3A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH5™	View
	SI8800EDB-T2-E1	Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IPB64N25S320ATMA1	Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View
	BUK9615-100A,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	ZXMN3B04N8TA	Diodes Incorporated, N-Channel 30V 7.2A (Ta) 2W (Ta) Surface Mount 8-SO,	View

SIHG22N60AE-GE3 - Tags

SIHG22N60AE-GE3 SIHG22N60AE-GE3 PDF SIHG22N60AE-GE3 datasheet SIHG22N60AE-GE3 specification SIHG22N60AE-GE3 image SIHG22N60AE-GE3 India Renesas Electronics India SIHG22N60AE-GE3 buy SIHG22N60AE-GE3 SIHG22N60AE-GE3 price SIHG22N60AE-GE3 distributor SIHG22N60AE-GE3 supplier SIHG22N60AE-GE3 wholesales