Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG33N60E-GE3

SIHG33N60E-GE3

SIHG33N60E-GE3

Part NumberSIHG33N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 33A TO-247AC

DatasheetSIHG33N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG33N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG33N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG33N60E-GE3.
We are offering SIHG33N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG33N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG33N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG33N60E-GE3 - Related Products

	APT106N60B2C6	Microsemi Corporation, N-Channel 600V 106A (Tc) 833W (Tc) Through Hole T-MAX™ [B2], CoolMOS™	View
	IPB180N08S402ATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 277W (Tc) Surface Mount PG-TO263-7-3, Automotive, AEC-Q101, OptiMOS™	View
	IPD60R600P7SAUMA1	Infineon Technologies, N-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	SI4848ADY-T1-GE3	Vishay Siliconix, N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC, TrenchFET®	View
	SI1424EDH-T1-GE3	Vishay Siliconix, N-Channel 20V 4A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View
	STF30N10F7	STMicroelectronics, N-Channel 100V 24A (Tc) 25W (Tc) Through Hole TO-220FP, DeepGATE™, STripFET™ VII	View
	RSR025N03TL	Rohm Semiconductor, N-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	TK560A60Y,S4X	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Tc) 30W Through Hole TO-220SIS, DTMOSV	View
	RJ1U330AAFRGTL	Rohm Semiconductor, N-Channel 250V 33A (Ta) 211W (Tc) Surface Mount LPTS, Automotive, AEC-Q101	View
	FDS3672	ON Semiconductor, N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TN5325N3-G	Microchip Technology, N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3,	View
	DMN3032LE-13	Diodes Incorporated, N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223,	View

SIHG33N60E-GE3 - Tags

SIHG33N60E-GE3 SIHG33N60E-GE3 PDF SIHG33N60E-GE3 datasheet SIHG33N60E-GE3 specification SIHG33N60E-GE3 image SIHG33N60E-GE3 India Renesas Electronics India SIHG33N60E-GE3 buy SIHG33N60E-GE3 SIHG33N60E-GE3 price SIHG33N60E-GE3 distributor SIHG33N60E-GE3 supplier SIHG33N60E-GE3 wholesales