Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

Part NumberSIHJ6N65E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V POWERPAK SO-8L

DatasheetSIHJ6N65E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ6N65E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ6N65E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ6N65E-T1-GE3.
We are offering SIHJ6N65E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ6N65E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ6N65E-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	596pF @ 100V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ6N65E-T1-GE3 - Related Products

	SI4850EY-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®	View
	BSC0902NSATMA1	Infineon Technologies, N-Channel 30V 24A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IRF2805STRLPBF	Infineon Technologies, N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	NTD4965NT4G	ON Semiconductor, N-Channel 30V 13A (Ta), 68A (Tc) 1.39W (Ta) Surface Mount DPAK-3,	View
	NVMFS6H818NWFT1G	ON Semiconductor, N-Channel 80V 20A (Ta), 123A (Tc) 3.8W (Ta), 136W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	IRF640PBF	Vishay Siliconix, N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	STL140N4LLF5	STMicroelectronics, N-Channel 40V 140A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ V	View
	BUK964R1-40E,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	RF4E100AJTCR	Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8,	View
	IRFR014TRPBF	Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	SSM6K217FE,LF	Toshiba Semiconductor and Storage, N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVII-H	View
	FDD8878	ON Semiconductor, N-Channel 30V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA, PowerTrench®	View

SIHJ6N65E-T1-GE3 - Tags

SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 PDF SIHJ6N65E-T1-GE3 datasheet SIHJ6N65E-T1-GE3 specification SIHJ6N65E-T1-GE3 image SIHJ6N65E-T1-GE3 India Renesas Electronics India SIHJ6N65E-T1-GE3 buy SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 price SIHJ6N65E-T1-GE3 distributor SIHJ6N65E-T1-GE3 supplier SIHJ6N65E-T1-GE3 wholesales