Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHP35N60E-GE3

SIHP35N60E-GE3

SIHP35N60E-GE3

Part NumberSIHP35N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 32A TO220AB

DatasheetSIHP35N60E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-220AB

To learn about the specification of SIHP35N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP35N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP35N60E-GE3.
We are offering SIHP35N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHP35N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHP35N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	132nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2760pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SIHP35N60E-GE3 - Related Products

	IPB026N06NATMA1	Infineon Technologies, N-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	NDP6060	ON Semiconductor, N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-220-3,	View
	STH265N6F6-6AG	STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F6	View
	IXFX360N15T2	IXYS, N-Channel 150V 360A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™	View
	TPN2R703NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	IXTP44N10T	IXYS, N-Channel 100V 44A (Tc) 130W (Tc) Through Hole TO-220AB, TrenchMV™	View
	SIHD7N60E-GE3	Vishay Siliconix, N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount D-Pak,	View
	FDS6690A	ON Semiconductor, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TSM85N10CZ C0G	Taiwan Semiconductor Corporation, N-Channel 100V 81A (Tc) 210W (Tc) Through Hole TO-220,	View
	IRFR120TRLPBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SIHU4N80E-GE3	Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251),	View
	FDP26N40	ON Semiconductor, N-Channel 400V 26A (Tc) 265W (Tc) Through Hole TO-220-3, UniFET™	View

SIHP35N60E-GE3 - Tags

SIHP35N60E-GE3 SIHP35N60E-GE3 PDF SIHP35N60E-GE3 datasheet SIHP35N60E-GE3 specification SIHP35N60E-GE3 image SIHP35N60E-GE3 India Renesas Electronics India SIHP35N60E-GE3 buy SIHP35N60E-GE3 SIHP35N60E-GE3 price SIHP35N60E-GE3 distributor SIHP35N60E-GE3 supplier SIHP35N60E-GE3 wholesales