Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHP6N80E-GE3

SIHP6N80E-GE3

SIHP6N80E-GE3

Part NumberSIHP6N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-220AB

DatasheetSIHP6N80E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole TO-220AB

To learn about the specification of SIHP6N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP6N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP6N80E-GE3.
We are offering SIHP6N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHP6N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHP6N80E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	827pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SIHP6N80E-GE3 - Related Products

	DMT10H015LK3-13	Diodes Incorporated, N-Channel 100V 50A (Tc) 2.9W (Ta) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101	View
	FDB3632-F085	ON Semiconductor, N-Channel 100V 12A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	SI4090DY-T1-GE3	Vishay Siliconix, N-Channel 100V 19.7A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FDFMA3N109	ON Semiconductor, N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	FDP2572	ON Semiconductor, N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Through Hole TO-220-3, PowerTrench®	View
	STV300NH02L	STMicroelectronics, N-Channel 24V 200A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III	View
	BS270	ON Semiconductor, N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	IRF3708PBF	Infineon Technologies, N-Channel 30V 62A (Tc) 87W (Tc) Through Hole TO-220AB, HEXFET®	View
	PSMN2R2-40PS,127	Nexperia USA Inc., N-Channel 40V 100A (Tc) 306W (Tc) Through Hole TO-220AB,	View
	APT77N60JC3	Microsemi Corporation, N-Channel 600V 77A (Tc) 568W (Tc) Chassis Mount ISOTOP®,	View
	SQD40N06-14L_GE3	Vishay Siliconix, N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®	View
	IXFQ60N50P3	IXYS, N-Channel 500V 60A (Tc) 1040W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View

SIHP6N80E-GE3 - Tags

SIHP6N80E-GE3 SIHP6N80E-GE3 PDF SIHP6N80E-GE3 datasheet SIHP6N80E-GE3 specification SIHP6N80E-GE3 image SIHP6N80E-GE3 India Renesas Electronics India SIHP6N80E-GE3 buy SIHP6N80E-GE3 SIHP6N80E-GE3 price SIHP6N80E-GE3 distributor SIHP6N80E-GE3 supplier SIHP6N80E-GE3 wholesales