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SIHW61N65EF-GE3

SIHW61N65EF-GE3

Part NumberSIHW61N65EF-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 64A TO247AD

DatasheetSIHW61N65EF

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AD

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SIHW61N65EF-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHW61N65EF
Standard Package	480
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	371nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7407pF @ 100V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3

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