Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

Part NumberSIJ186DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V PPAK SO-8L

DatasheetSIJ186DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ186DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ186DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ186DP-T1-GE3.
We are offering SIJ186DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ186DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ186DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ186DP-T1-GE3 - Related Products

	SUD70090E-GE3	Vishay Siliconix, N-Channel 100V 50A (Tc) 125W (Tc) Surface Mount TO-252, ThunderFET®	View
	STB30NF20L	STMicroelectronics, N-Channel 200V 30A (Tc) 150W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, STripFET™	View
	IRFB52N15DPBF	Infineon Technologies, N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	STW37N60DM2AG	STMicroelectronics, N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2	View
	PSMN1R2-25YL,115	Nexperia USA Inc., N-Channel 25V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IXFB60N80P	IXYS, N-Channel 800V 60A (Tc) 1250W (Tc) Through Hole PLUS264™, HiPerFET™, PolarHT™	View
	BSS214NH6327XTSA1	Infineon Technologies, N-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	TK12A80W,S4X	Toshiba Semiconductor and Storage, N-Channel 800V 11.5A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	TN0104N3-G	Microchip Technology, N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3,	View
	PSMN4R3-80PS,127	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Through Hole TO-220AB,	View
	BSZ040N04LSGATMA1	Infineon Technologies, N-Channel 40V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	IRL510STRLPBF	Vishay Siliconix, N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View

SIJ186DP-T1-GE3 - Tags

SIJ186DP-T1-GE3 SIJ186DP-T1-GE3 PDF SIJ186DP-T1-GE3 datasheet SIJ186DP-T1-GE3 specification SIJ186DP-T1-GE3 image SIJ186DP-T1-GE3 India Renesas Electronics India SIJ186DP-T1-GE3 buy SIJ186DP-T1-GE3 SIJ186DP-T1-GE3 price SIJ186DP-T1-GE3 distributor SIJ186DP-T1-GE3 supplier SIJ186DP-T1-GE3 wholesales