Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR112DP-T1-RE3

SIR112DP-T1-RE3

SIR112DP-T1-RE3

Part NumberSIR112DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V

DatasheetSIR112DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR112DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR112DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR112DP-T1-RE3.
We are offering SIR112DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR112DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR112DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.96mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	4270pF @ 20V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR112DP-T1-RE3 - Related Products

	APT28M120L	Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole TO-264 [L], POWER MOS 8™	View
	DMN2005UFG-7	Diodes Incorporated, N-Channel 20V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8,	View
	BUK7219-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	BSS159NH6327XTSA2	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	IRFL214TRPBF	Vishay Siliconix, N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	NTTFS5C454NLTWG	ON Semiconductor, N-Channel 40V 20A (Ta), 85A (Tc) 3.2W (Ta), 55W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	AUIRF7675M2TR	Infineon Technologies, N-Channel 150V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DIRECTFET™ M2, HEXFET®	View
	STW48NM60N	STMicroelectronics, N-Channel 600V 44A (Tc) 330W (Tc) Through Hole TO-247, MDmesh™ II	View
	IRL1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	PMZ200UNEYL	Nexperia USA Inc., N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006-3,	View
	DMN6068LK3-13	Diodes Incorporated, N-Channel 60V 6A (Ta) 2.12W (Ta) Surface Mount TO-252-3,	View
	RQ3E150BNTB	Rohm Semiconductor, N-Channel 30V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View

SIR112DP-T1-RE3 - Tags

SIR112DP-T1-RE3 SIR112DP-T1-RE3 PDF SIR112DP-T1-RE3 datasheet SIR112DP-T1-RE3 specification SIR112DP-T1-RE3 image SIR112DP-T1-RE3 India Renesas Electronics India SIR112DP-T1-RE3 buy SIR112DP-T1-RE3 SIR112DP-T1-RE3 price SIR112DP-T1-RE3 distributor SIR112DP-T1-RE3 supplier SIR112DP-T1-RE3 wholesales