SIR140DP-T1-RE3

Part NumberSIR140DP-T1-RE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR140DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	71.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	8150pF @ 10V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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NTR4501NT1G	ON Semiconductor, N-Channel 20V 3.2A (Ta) 1.25W (Tj) Surface Mount SOT-23-3 (TO-236),	View
TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
NTB45N06T4G	ON Semiconductor, N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount D2PAK,	View
FDS3590	ON Semiconductor, N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
SIRA12BDP-T1-GE3	Vishay Siliconix, N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
STL3NM60N	STMicroelectronics, N-Channel 600V 650mA (Ta), 2.2A (Tc) 2W (Ta), 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3), MDmesh™ II	View