Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR186DP-T1-RE3

SIR186DP-T1-RE3

SIR186DP-T1-RE3

Part NumberSIR186DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 60A POWERPAKSO-8

DatasheetSIR186DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR186DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR186DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR186DP-T1-RE3.
We are offering SIR186DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR186DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR186DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR186DP-T1-RE3 - Related Products

	RD3T050CNTL1	Rohm Semiconductor, N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252,	View
	IXFK52N100X	IXYS, N-Channel 1000V 52A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™	View
	DN1509N8-G	Microchip Technology, N-Channel 90V 360mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	TSM210N02CX RFG	Taiwan Semiconductor Corporation, N-Channel 20V 6.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	IRFS4020TRLPBF	Infineon Technologies, N-Channel 200V 18A (Tc) 100W (Tc) Surface Mount D2PAK,	View
	PMBF170,235	Nexperia USA Inc., N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
	TPN4R303NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 40A (Tc) 700mW (Ta), 34W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	BS107PSTZ	Diodes Incorporated, N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole E-Line (TO-92 compatible), Automotive, AEC-Q101	View
	NTMFS5C426NT1G	ON Semiconductor, N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	NVMFS5C404NLWFAFT1G	ON Semiconductor, N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	DMN10H120SE-13	Diodes Incorporated, N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	SI7148DP-T1-GE3	Vishay Siliconix, N-Channel 75V 28A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIR186DP-T1-RE3 - Tags

SIR186DP-T1-RE3 SIR186DP-T1-RE3 PDF SIR186DP-T1-RE3 datasheet SIR186DP-T1-RE3 specification SIR186DP-T1-RE3 image SIR186DP-T1-RE3 India Renesas Electronics India SIR186DP-T1-RE3 buy SIR186DP-T1-RE3 SIR186DP-T1-RE3 price SIR186DP-T1-RE3 distributor SIR186DP-T1-RE3 supplier SIR186DP-T1-RE3 wholesales