SIR402DP-T1-GE3
SIR402DP-T1-GE3
Part Number SIR402DP-T1-GE3 Description MOSFET N-CH 30V 35A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR402DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR402DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR402DP-T1-GE3.
We are offering SIR402DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR402DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR402DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 15V FET Feature - Power Dissipation (Max) 4.2W (Ta), 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR402DP-T1-GE3 - Related ProductsMore >>
2SK3564(STA4,Q,M) Toshiba Semiconductor and Storage, N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV
View
IRFS4127TRLPBF Infineon Technologies, N-Channel 200V 72A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
CSD17578Q3A Texas Instruments, N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
View
IXTK110N20L2 IXYS, N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™
View
STD16N65M2 STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2
View
SI2312BDS-T1-E3 Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
DMN10H170SK3-13 Diodes Incorporated, N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-252-3,
View
IRLIZ44GPBF Vishay Siliconix, N-Channel 60V 30A (Tc) 48W (Tc) Through Hole TO-220-3,
View
STP55NF06L STMicroelectronics, N-Channel 60V 55A (Tc) 95W (Tc) Through Hole TO-220AB, STripFET™ II
View
CSD17484F4T Texas Instruments, N-Channel 30V 3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRLS3034TRLPBF Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
BSS138-7-F Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
SIR402DP-T1-GE3 - Tags
English
