Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR608DP-T1-RE3

SIR608DP-T1-RE3

SIR608DP-T1-RE3

Part NumberSIR608DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 45V POWERPAK SO-8

DatasheetSiR608DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 45V 51A (Ta), 208A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR608DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR608DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR608DP-T1-RE3.
We are offering SIR608DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR608DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR608DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45V
Current - Continuous Drain (Id) @ 25°C	51A (Ta), 208A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	167nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	8900pF @ 20V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR608DP-T1-RE3 - Related Products

	STP45N60DM2AG	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-220, Automotive, AEC-Q101, MDmesh™ DM2	View
	IXTH67N10	IXYS, N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), MegaMOS™	View
	IPB026N06NATMA1	Infineon Technologies, N-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	RUC002N05HZGT116	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 350mW (Ta) Surface Mount SST3, Automotive, AEC-Q101	View
	FQD16N25CTM	ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®	View
	FQU20N06LTU	ON Semiconductor, N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK, QFET®	View
	DMN26D0UFB4-7	Diodes Incorporated, N-Channel 20V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,	View
	CWDM3011N TR13	Central Semiconductor Corp, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	FDD9411L-F085	ON Semiconductor, N-Channel 40V 25A (Tc) 48.4W (Tj) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, PowerTrench®	View
	IRFR024NTRPBF	Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPD70R600P7SAUMA1	Infineon Technologies, N-Channel 700V 8.5A (Tc) 43W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	BSS138K	ON Semiconductor, N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View

SIR608DP-T1-RE3 - Tags

SIR608DP-T1-RE3 SIR608DP-T1-RE3 PDF SIR608DP-T1-RE3 datasheet SIR608DP-T1-RE3 specification SIR608DP-T1-RE3 image SIR608DP-T1-RE3 India Renesas Electronics India SIR608DP-T1-RE3 buy SIR608DP-T1-RE3 SIR608DP-T1-RE3 price SIR608DP-T1-RE3 distributor SIR608DP-T1-RE3 supplier SIR608DP-T1-RE3 wholesales