SIR616DP-T1-GE3
SIR616DP-T1-GE3
Part Number SIR616DP-T1-GE3 Description MOSFET N-CH 200V 20.2A SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
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SIR616DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR616DP Standard Package 1 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 50.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 7.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 100V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
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