Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR626LDP-T1-RE3

SIR626LDP-T1-RE3

SIR626LDP-T1-RE3

Part NumberSIR626LDP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60-V POWERPAK SO-8

DatasheetSIR626LDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR626LDP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR626LDP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR626LDP-T1-RE3.
We are offering SIR626LDP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR626LDP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR626LDP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5900pF @ 30V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR626LDP-T1-RE3 - Related Products

	IRFU420APBF	Vishay Siliconix, N-Channel 500V 3.3A (Tc) 83W (Tc) Through Hole TO-251AA,	View
	NVD5C478NT4G	ON Semiconductor, N-Channel 40V 14A (Ta), 43A (Tc) 3W (Ta), 30W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	IRF5802TRPBF	Infineon Technologies, N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	MTD3055VL	ON Semiconductor, N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,	View
	STL7N6F7	STMicroelectronics, N-Channel 60V 7A (Tc) 2.4W (Ta) Surface Mount PowerFlat™ (2x2), STripFET™	View
	IPD35N12S3L24ATMA1	Infineon Technologies, N-Channel 120V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	RJK005N03FRAT146	Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3, Automotive, AEC-Q101	View
	SI4100DY-T1-GE3	Vishay Siliconix, N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRF8734TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	PSMN7R0-60YS,115	Nexperia USA Inc., N-Channel 60V 89A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	ZXMN6A07ZTA	Diodes Incorporated, N-Channel 60V 1.9A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,	View
	FQA70N10	ON Semiconductor, N-Channel 100V 70A (Tc) 214W (Tc) Through Hole TO-3PN, QFET®	View

SIR626LDP-T1-RE3 - Tags

SIR626LDP-T1-RE3 SIR626LDP-T1-RE3 PDF SIR626LDP-T1-RE3 datasheet SIR626LDP-T1-RE3 specification SIR626LDP-T1-RE3 image SIR626LDP-T1-RE3 India Renesas Electronics India SIR626LDP-T1-RE3 buy SIR626LDP-T1-RE3 SIR626LDP-T1-RE3 price SIR626LDP-T1-RE3 distributor SIR626LDP-T1-RE3 supplier SIR626LDP-T1-RE3 wholesales