SIR638DP-T1-GE3
SIR638DP-T1-GE3
Part Number SIR638DP-T1-GE3 Description MOSFET N-CH 40V 100A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR638DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR638DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR638DP-T1-GE3.
We are offering SIR638DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR638DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiR638DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 204nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 20V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR638DP-T1-GE3 - Related ProductsMore >>
IPAN60R800CEXKSA1 Infineon Technologies, N-Channel 600V 8.4A (Tc) 27W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™
View
STP11N60DM2 STMicroelectronics, N-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ DM2
View
STW24N60M2 STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, MDmesh™ II Plus
View
DMN10H120SFG-7 Diodes Incorporated, N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
View
AOD11S60 Alpha & Omega Semiconductor Inc., N-Channel 600V 11A (Tc) 208W (Tc) Surface Mount TO-252, (D-Pak), aMOS™
View
CSD17527Q5A Texas Instruments, N-Channel 30V 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
DMN3070SSN-7 Diodes Incorporated, N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SC-59,
View
SI8812DB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
IRLU014PBF Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
View
R8002ANJFRGTL Rohm Semiconductor, N-Channel 800V 2A (Tc) 62W (Tc) Surface Mount LPTS, Automotive, AEC-Q101
View
MVGSF1N02LT1G ON Semiconductor, N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SIHG018N60E-GE3 Vishay Siliconix, N-Channel 600V 99A (Tc) 524W (Tc) Through Hole TO-247AC,
View
SIR638DP-T1-GE3 - Tags
English
