Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR670DP-T1-GE3

SIR670DP-T1-GE3

SIR670DP-T1-GE3

Part NumberSIR670DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 60A PPAK SO-8

DatasheetSIR670DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR670DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR670DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR670DP-T1-GE3.
We are offering SIR670DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR670DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR670DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 56.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR670DP-T1-GE3 - Related Products

	BSS123	ON Semiconductor, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,	View
	STD110N8F6	STMicroelectronics, N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK, STripFET™ F6	View
	IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPB020N08N5ATMA1	Infineon Technologies, N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	BSC093N15NS5ATMA1	Infineon Technologies, N-Channel 150V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	FDMS8333L	ON Semiconductor, N-Channel 40V 22A (Ta), 76A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SIHG25N60EFL-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC,	View
	FCH041N60F-F085	ON Semiconductor, N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, SuperFET® II	View
	2N7002,215	Nexperia USA Inc., N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB, TrenchMOS™	View
	SSM6K514NU,LF	Toshiba Semiconductor and Storage, N-Channel 40V 12A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H	View
	DMN1150UFB-7B	Diodes Incorporated, N-Channel 12V 1.41A (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	IXFX120N20	IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™	View

SIR670DP-T1-GE3 - Tags

SIR670DP-T1-GE3 SIR670DP-T1-GE3 PDF SIR670DP-T1-GE3 datasheet SIR670DP-T1-GE3 specification SIR670DP-T1-GE3 image SIR670DP-T1-GE3 India Renesas Electronics India SIR670DP-T1-GE3 buy SIR670DP-T1-GE3 SIR670DP-T1-GE3 price SIR670DP-T1-GE3 distributor SIR670DP-T1-GE3 supplier SIR670DP-T1-GE3 wholesales