Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	SI7116DN-T1-E3	Vishay Siliconix, N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FDMA420NZ	ON Semiconductor, N-Channel 20V 5.7A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	NTF3055L108T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	SQJ402EP-T1_GE3	Vishay Siliconix, N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SUD40N10-25-E3	Vishay Siliconix, N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	STU9HN65M2	STMicroelectronics, N-Channel 650V 5.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ M2	View
	HUF75345P3	ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-220-3, UltraFET™	View
	PMPB12UNEX	Nexperia USA Inc., N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6,	View
	ZXMN6A11ZTA	Diodes Incorporated, N-Channel 60V 2.7A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,	View
	STL110N10F7	STMicroelectronics, N-Channel 100V 107A (Tc) 136W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	TSM70N1R4CH C5G	Taiwan Semiconductor Corporation, N-Channel 700V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK),	View
	BSC076N06NS3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales