Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	SI7852ADP-T1-E3	Vishay Siliconix, N-Channel 80V 30A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SSM3K17FU,LF	Toshiba Semiconductor and Storage, N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSV	View
	BSC018NE2LSIATMA1	Infineon Technologies, N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IPDD60R080G7XTMA1	Infineon Technologies, N-Channel 600V 29A (Tc) 174W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	RFD16N06LESM9A	ON Semiconductor, N-Channel 60V 16A (Tc) 90W (Tc) Surface Mount TO-252AA,	View
	BSC061N08NS5ATMA1	Infineon Technologies, N-Channel 80V 82A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	STP6N80K5	STMicroelectronics, N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole TO-220, SuperMESH5™	View
	DN3545N8-G	Microchip Technology, N-Channel 450V 200mA 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	NDS8425	ON Semiconductor, N-Channel 20V 7.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	2N7000-D75Z	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	FDB050AN06A0	ON Semiconductor, N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface Mount D²PAK, PowerTrench®	View
	SQ2318AES-T1_GE3	Vishay Siliconix, N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales