Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	FDMS86182	ON Semiconductor, N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	FQU2N60CTU	ON Semiconductor, N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View
	FCPF16N60	ON Semiconductor, N-Channel 600V 16A (Tc) 37.9W (Tc) Through Hole TO-220F, SuperFET™	View
	IPD60R385CPATMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CP	View
	BSC109N10NS3GATMA1	Infineon Technologies, N-Channel 100V 63A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	TSM130NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	NTB082N65S3F	ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263), SuperFET® III	View
	FDD8647L	ON Semiconductor, N-Channel 40V 14A (Ta), 42A (Tc) 3.1W (Ta), 43W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	STF5N62K3	STMicroelectronics, N-Channel 620V 4.2A (Tc) 25W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	PSMN1R4-30YLDX	Nexperia USA Inc., N-Channel 30V 100A (Tc) 166W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SIHB25N50E-GE3	Vishay Siliconix, N-Channel 500V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak),	View
	BSS138NH6327XTSA2	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales