Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR818DP-T1-GE3

SIR818DP-T1-GE3

SIR818DP-T1-GE3

Part NumberSIR818DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 50A PPAK SO-8

DatasheetSIR818DP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR818DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR818DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR818DP-T1-GE3.
We are offering SIR818DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR818DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR818DP-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 15V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR818DP-T1-GE3 - Related Products

	SQP120N06-06_GE3	Vishay Siliconix, N-Channel 60V 119A (Tc) 175W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	CSD17310Q5A	Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	CSD17510Q5A	Texas Instruments, N-Channel 30V 20A (Ta), 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFB42N20DPBF	Infineon Technologies, N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	FCD360N65S3R0	ON Semiconductor, N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252), SuperFET® III	View
	SI5418DU-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®	View
	IRFR110PBF	Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	NTMFS4C09NT1G	ON Semiconductor, N-Channel 30V 9A (Ta) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IRF7468TRPBF	Infineon Technologies, N-Channel 40V 9.4A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	RQ6E085BNTCR	Rohm Semiconductor, N-Channel 30V 8.5A (Tc) 1.25W (Tc) Surface Mount SOT-457,	View
	FQN1N60CTA	ON Semiconductor, N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3, QFET®	View
	SI7110DN-T1-E3	Vishay Siliconix, N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View

SIR818DP-T1-GE3 - Tags

SIR818DP-T1-GE3 SIR818DP-T1-GE3 PDF SIR818DP-T1-GE3 datasheet SIR818DP-T1-GE3 specification SIR818DP-T1-GE3 image SIR818DP-T1-GE3 India Renesas Electronics India SIR818DP-T1-GE3 buy SIR818DP-T1-GE3 SIR818DP-T1-GE3 price SIR818DP-T1-GE3 distributor SIR818DP-T1-GE3 supplier SIR818DP-T1-GE3 wholesales