Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR872DP-T1-GE3

SIR872DP-T1-GE3

SIR872DP-T1-GE3

Part NumberSIR872DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 150V 53.7A PPAK SO-8

DatasheetSIR872DP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount

To learn about the specification of SIR872DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR872DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR872DP-T1-GE3.
We are offering SIR872DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR872DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR872DP-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 75V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8

SIR872DP-T1-GE3 - Related Products

	TSM1NB60CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 1A (Tc) 39W (Tc) Surface Mount TO-252, (D-Pak),	View
	SUM80090E-GE3	Vishay Siliconix, N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®	View
	TPN2R703NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	SIHF22N60E-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,	View
	SI4178DY-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STB26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	IPW65R080CFDAFKSA1	Infineon Technologies, N-Channel 650V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3, Automotive, AEC-Q101, CoolMOS™	View
	SISH434DN-T1-GE3	Vishay Siliconix, N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	IRFR310TRPBF	Vishay Siliconix, N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	BSS225H6327FTSA1	Infineon Technologies, N-Channel 600V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89, SIPMOS®	View
	TN0110N3-G	Microchip Technology, N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	STS7NF60L	STMicroelectronics, N-Channel 60V 7.5A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II	View

SIR872DP-T1-GE3 - Tags

SIR872DP-T1-GE3 SIR872DP-T1-GE3 PDF SIR872DP-T1-GE3 datasheet SIR872DP-T1-GE3 specification SIR872DP-T1-GE3 image SIR872DP-T1-GE3 India Renesas Electronics India SIR872DP-T1-GE3 buy SIR872DP-T1-GE3 SIR872DP-T1-GE3 price SIR872DP-T1-GE3 distributor SIR872DP-T1-GE3 supplier SIR872DP-T1-GE3 wholesales