Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882DP-T1-GE3

SIR882DP-T1-GE3

SIR882DP-T1-GE3

Part NumberSIR882DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSIR882DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882DP-T1-GE3.
We are offering SIR882DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR882DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882DP-T1-GE3 - Related Products

	IRF830SPBF	Vishay Siliconix, N-Channel 500V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	BUK7277-55A,118	Nexperia USA Inc., N-Channel 55V 18A (Tc) 51W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	BUK7Y1R7-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 294W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	BUK9880-55A/CUX	Nexperia USA Inc., N-Channel 55V 7A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View
	TSM80N1R2CP ROG	Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak),	View
	IPN80R4K5P7ATMA1	Infineon Technologies, N-Channel 800V 1.5A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	IRF630PBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	STD6N65M2	STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	FDG311N	ON Semiconductor, N-Channel 20V 1.9A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	IRF2907ZPBF	Infineon Technologies, N-Channel 75V 160A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDP2532	ON Semiconductor, N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-220-3, PowerTrench®	View
	BUK92150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View

SIR882DP-T1-GE3 - Tags

SIR882DP-T1-GE3 SIR882DP-T1-GE3 PDF SIR882DP-T1-GE3 datasheet SIR882DP-T1-GE3 specification SIR882DP-T1-GE3 image SIR882DP-T1-GE3 India Renesas Electronics India SIR882DP-T1-GE3 buy SIR882DP-T1-GE3 SIR882DP-T1-GE3 price SIR882DP-T1-GE3 distributor SIR882DP-T1-GE3 supplier SIR882DP-T1-GE3 wholesales