Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882DP-T1-GE3

SIR882DP-T1-GE3

SIR882DP-T1-GE3

Part NumberSIR882DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSIR882DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882DP-T1-GE3.
We are offering SIR882DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR882DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882DP-T1-GE3 - Related Products

	BUK92150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	SPD04N50C3ATMA1	Infineon Technologies, N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1, CoolMOS™	View
	IXFK240N15T2	IXYS, N-Channel 150V 240A (Tc) 1250W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™	View
	IPZ40N04S53R1ATMA1	Infineon Technologies, N-Channel 40V 40A (Tc) 71W (Tc) Surface Mount PG-TSDSON-8, Automotive, AEC-Q101, OptiMOS™	View
	AO3160E	Alpha & Omega Semiconductor Inc., N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3,	View
	ZXMN20B28KTC	Diodes Incorporated, N-Channel 200V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3,	View
	PHP29N08T,127	Nexperia USA Inc., N-Channel 75V 27A (Tc) 88W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	FDP8860	ON Semiconductor, N-Channel 30V 80A (Tc) 254W (Tc) Through Hole TO-220-3, PowerTrench®	View
	STB34NM60N	STMicroelectronics, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	PSMN1R8-40YLC,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	PSMN050-80BS,118	Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,	View
	SIRA22DP-T1-RE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View

SIR882DP-T1-GE3 - Tags

SIR882DP-T1-GE3 SIR882DP-T1-GE3 PDF SIR882DP-T1-GE3 datasheet SIR882DP-T1-GE3 specification SIR882DP-T1-GE3 image SIR882DP-T1-GE3 India Renesas Electronics India SIR882DP-T1-GE3 buy SIR882DP-T1-GE3 SIR882DP-T1-GE3 price SIR882DP-T1-GE3 distributor SIR882DP-T1-GE3 supplier SIR882DP-T1-GE3 wholesales