SIRA04DP-T1-GE3
SIRA04DP-T1-GE3
Part Number SIRA04DP-T1-GE3 Description MOSFET N-CH 30V 40A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIRA04DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA04DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA04DP-T1-GE3.
We are offering SIRA04DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIRA04DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIRA04DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.15mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIRA04DP-T1-GE3 - Related ProductsMore >>
CSD17576Q5B Texas Instruments, N-Channel 30V 100A (Ta) 3.1W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
IRL530NPBF Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Through Hole TO-220AB, HEXFET®
View
FDG327NZ ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
View
NTR5198NLT1G ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
FDP8447L ON Semiconductor, N-Channel 40V 12A (Ta), 50A (Tc) 2W (Ta), 60W (Tc) Through Hole TO-220-3, PowerTrench®
View
SI4488DY-T1-GE3 Vishay Siliconix, N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
CSD13380F3 Texas Instruments, N-Channel 12V 3.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRFS3806TRLPBF Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D2PAK, HEXFET®
View
IRLR2703TRPBF Infineon Technologies, N-Channel 30V 23A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
RJP020N06T100 Rohm Semiconductor, N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3,
View
IRF630NSTRLPBF Infineon Technologies, N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK, HEXFET®
View
IPD80R3K3P7ATMA1 Infineon Technologies, N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
SIRA04DP-T1-GE3 - Tags
English
