Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3

Part NumberSIRA28BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V POWERPAK SO-8

DatasheetSIRA28BDP Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA28BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA28BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA28BDP-T1-GE3.
We are offering SIRA28BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA28BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA28BDP Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	582pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 17W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA28BDP-T1-GE3 - Related Products

	IRFZ48NPBF	Infineon Technologies, N-Channel 55V 64A (Tc) 130W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPB60R060P7ATMA1	Infineon Technologies, N-Channel 650V 48A (Tc) 164W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	2N7002BKW,115	Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™	View
	PHP27NQ11T,127	Nexperia USA Inc., N-Channel 110V 27.6A (Tc) 107W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	FCP380N60	ON Semiconductor, N-Channel 600V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3, SuperFET® II	View
	SQD07N25-350H_GE3	Vishay Siliconix, N-Channel 250V 7A (Tc) 71W (Tc) Surface Mount TO-252AA,	View
	FQP30N06L	ON Semiconductor, N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®	View
	ZXMN2B14FHTA	Diodes Incorporated, N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23-3,	View
	IRF820STRLPBF	Vishay Siliconix, N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,	View
	IRFH5210TRPBF	Infineon Technologies, N-Channel 100V 10A (Ta), 55A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
	STW9N150	STMicroelectronics, N-Channel 1500V 8A (Tc) 320W (Tc) Through Hole TO-247-3, PowerMESH™	View
	SSM6K211FE,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII	View

SIRA28BDP-T1-GE3 - Tags

SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 PDF SIRA28BDP-T1-GE3 datasheet SIRA28BDP-T1-GE3 specification SIRA28BDP-T1-GE3 image SIRA28BDP-T1-GE3 India Renesas Electronics India SIRA28BDP-T1-GE3 buy SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 price SIRA28BDP-T1-GE3 distributor SIRA28BDP-T1-GE3 supplier SIRA28BDP-T1-GE3 wholesales