SIRA50DP-T1-RE3

Part NumberSIRA50DP-T1-RE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA50DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	194nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	8445pF @ 20V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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IRFZ44ESTRLPBF	Infineon Technologies, N-Channel 60V 48A (Tc) 110W (Tc) Surface Mount D2PAK, HEXFET®	View
TSM320N03CX RFG	Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,	View
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SI7772DP-T1-GE3	Vishay Siliconix, N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8, SkyFET®, TrenchFET®	View
STP18N60DM2	STMicroelectronics, N-Channel 600V 12A (Tc) 90W (Tc) Through Hole TO-220, MDmesh™ DM2	View
BSC057N08NS3GATMA1	Infineon Technologies, N-Channel 80V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
BUK962R5-60E,118	Nexperia USA Inc., N-Channel 60V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
R6007KNJTL	Rohm Semiconductor, N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount TO-263,	View
BSC030N03MSGATMA1	Infineon Technologies, N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
SIR626LDP-T1-RE3	Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View