Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA52DP-T1-GE3

SIRA52DP-T1-GE3

SIRA52DP-T1-GE3

Part NumberSIRA52DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A PPAK SO-8

DatasheetSiRA52DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA52DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA52DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA52DP-T1-GE3.
We are offering SIRA52DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA52DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiRA52DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	7150pF @ 20V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA52DP-T1-GE3 - Related Products

	SSM3K72CFS,LF	Toshiba Semiconductor and Storage, N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H	View
	SIR690DP-T1-GE3	Vishay Siliconix, N-Channel 200V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	RSS065N06FRATB	Rohm Semiconductor, N-Channel 60V 6.5A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	SIHA22N60AE-E3	Vishay Siliconix, N-Channel 600V 20A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,	View
	RQ3E130MNTB1	Rohm Semiconductor, N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	IXFH270N06T3	IXYS, N-Channel 60V 270A (Tc) 480W (Tc) Through Hole TO-247, HiperFET™, TrenchT3™	View
	SIHA6N65E-E3	Vishay Siliconix, N-Channel 650V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,	View
	IPP037N08N3GXKSA1	Infineon Technologies, N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	BSS806NH6327XTSA1	Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	NTMFS4C025NT1G	ON Semiconductor, N-Channel 30V 20A (Ta), 69A (Tc) 2.55W (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	DMN2046U-7	Diodes Incorporated, N-Channel 20V 3.4A (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	IRFBC20PBF	Vishay Siliconix, N-Channel 600V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB,	View

SIRA52DP-T1-GE3 - Tags

SIRA52DP-T1-GE3 SIRA52DP-T1-GE3 PDF SIRA52DP-T1-GE3 datasheet SIRA52DP-T1-GE3 specification SIRA52DP-T1-GE3 image SIRA52DP-T1-GE3 India Renesas Electronics India SIRA52DP-T1-GE3 buy SIRA52DP-T1-GE3 SIRA52DP-T1-GE3 price SIRA52DP-T1-GE3 distributor SIRA52DP-T1-GE3 supplier SIRA52DP-T1-GE3 wholesales