Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS413DN-T1-GE3

SIS413DN-T1-GE3

SIS413DN-T1-GE3

Part NumberSIS413DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 18A PPAK 1212-8

DatasheetSIS413DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS413DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS413DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS413DN-T1-GE3.
We are offering SIS413DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS413DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS413DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4280pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS413DN-T1-GE3 - Related Products

	SI2323DDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
	SQJ459EP-T1_GE3	Vishay Siliconix, P-Channel 60V 52A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SI7463DP-T1-E3	Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BSH205G2R	Nexperia USA Inc., P-Channel 20V 2A (Ta) 480mW (Ta) Surface Mount TO-236AB,	View
	PMV160UP,215	Nexperia USA Inc., P-Channel 20V 1.2A (Ta) 335mW (Ta), 2.17W (Tc) Surface Mount TO-236AB,	View
	SI7489DP-T1-GE3	Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF6218STRLPBF	Infineon Technologies, P-Channel 150V 27A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD25480F3T	Texas Instruments, P-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	SI4455DY-T1-GE3	Vishay Siliconix, P-Channel 150V 2A (Ta) 5.9W (Tc) Surface Mount 8-SO, TrenchFET®	View
	NTP2955G	ON Semiconductor, P-Channel 60V 2.4A (Ta) 2.4W (Ta), 62.5W (Tc) Through Hole TO-220AB,	View
	FDC640P	ON Semiconductor, P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMP2123L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View

SIS413DN-T1-GE3 - Tags

SIS413DN-T1-GE3 SIS413DN-T1-GE3 PDF SIS413DN-T1-GE3 datasheet SIS413DN-T1-GE3 specification SIS413DN-T1-GE3 image SIS413DN-T1-GE3 India Renesas Electronics India SIS413DN-T1-GE3 buy SIS413DN-T1-GE3 SIS413DN-T1-GE3 price SIS413DN-T1-GE3 distributor SIS413DN-T1-GE3 supplier SIS413DN-T1-GE3 wholesales