Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS434DN-T1-GE3

SIS434DN-T1-GE3

SIS434DN-T1-GE3

Part NumberSIS434DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 35A PPAK 1212-8

DatasheetSIS434DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS434DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS434DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS434DN-T1-GE3.
We are offering SIS434DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS434DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS434DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1530pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS434DN-T1-GE3 - Related Products

	DMTH6016LPS-13	Diodes Incorporated, N-Channel 60V 10.6A (Ta), 37.1A (Tc) 3W (Ta), 37.5W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	BSZ075N08NS5ATMA1	Infineon Technologies, N-Channel 80V 40A (Tc) 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SIHP38N60E-GE3	Vishay Siliconix, N-Channel 600V 43A (Tc) 313W (Tc) Through Hole TO-220AB,	View
	CSD25480F3	Texas Instruments, P-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	TN2504N8-G	Microchip Technology, N-Channel 40V 890mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),	View
	NTLJF4156NTAG	ON Semiconductor, N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2),	View
	IRFB3077PBF	Infineon Technologies, N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®	View
	AON7410	Alpha & Omega Semiconductor Inc., N-Channel 30V 9.5A (Ta), 24A (Tc) 3.1W (Ta), 20W (Tc) Surface Mount 8-DFN (3x3),	View
	SIRA54DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	CSD13306WT	Texas Instruments, N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™	View
	SIRA52DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STF5N62K3	STMicroelectronics, N-Channel 620V 4.2A (Tc) 25W (Tc) Through Hole TO-220FP, SuperMESH3™	View

SIS434DN-T1-GE3 - Tags

SIS434DN-T1-GE3 SIS434DN-T1-GE3 PDF SIS434DN-T1-GE3 datasheet SIS434DN-T1-GE3 specification SIS434DN-T1-GE3 image SIS434DN-T1-GE3 India Renesas Electronics India SIS434DN-T1-GE3 buy SIS434DN-T1-GE3 SIS434DN-T1-GE3 price SIS434DN-T1-GE3 distributor SIS434DN-T1-GE3 supplier SIS434DN-T1-GE3 wholesales