Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS888DN-T1-GE3

SIS888DN-T1-GE3

SIS888DN-T1-GE3

Part NumberSIS888DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 150V 20.2A 1212-8S

DatasheetSIS888DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SIS888DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS888DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS888DN-T1-GE3.
We are offering SIS888DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS888DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS888DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 75V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SIS888DN-T1-GE3 - Related Products

	FDD10N20LZTM	ON Semiconductor, N-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount DPAK, UniFET™	View
	FDMC7660S	ON Semiconductor, N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33, PowerTrench®, SyncFET™	View
	BUK7Y10-30B,115	Nexperia USA Inc., N-Channel 30V 67A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IXFH94N30P3	IXYS, N-Channel 300V 94A (Tc) 1040W (Tc) Through Hole TO-247, HiPerFET™, Polar3™	View
	PSMN6R5-80BS,118	Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2PAK,	View
	IPD60R380C6ATMA1	Infineon Technologies, N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	IXTA3N50D2	IXYS, N-Channel 500V 3A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA),	View
	BUK7613-60E,118	Nexperia USA Inc., N-Channel 60V 58A (Tc) 96W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	PSMN6R3-120PS	Nexperia USA Inc., N-Channel 120V 70A (Tc) 405W (Tc) Through Hole TO-220AB,	View
	FDD86110	ON Semiconductor, N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	CSD17573Q5B	Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IXFP16N50P	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-220AB, HiPerFET™, PolarHT™	View

SIS888DN-T1-GE3 - Tags

SIS888DN-T1-GE3 SIS888DN-T1-GE3 PDF SIS888DN-T1-GE3 datasheet SIS888DN-T1-GE3 specification SIS888DN-T1-GE3 image SIS888DN-T1-GE3 India Renesas Electronics India SIS888DN-T1-GE3 buy SIS888DN-T1-GE3 SIS888DN-T1-GE3 price SIS888DN-T1-GE3 distributor SIS888DN-T1-GE3 supplier SIS888DN-T1-GE3 wholesales