Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH410DN-T1-GE3

SISH410DN-T1-GE3

SISH410DN-T1-GE3

Part NumberSISH410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN PPAK 1212-8SH

DatasheetSISH410DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH410DN-T1-GE3.
We are offering SISH410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH410DN-T1-GE3 - Related Products

	IRF6648TRPBF	Infineon Technologies, N-Channel 60V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET®	View
	RTQ035N03TR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	IPB011N04NGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	CEDM7004VL TR	Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	IRFB3306GPBF	Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	2N7000-D74Z	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	IRFR210TRPBF	Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	IPB015N04LGATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STD64N4F6AG	STMicroelectronics, N-Channel 40V 54A (Tc) 60W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ F6	View
	HAT2169H-EL-E	Renesas Electronics America, N-Channel 40V 50A (Ta) 30W (Tc) Surface Mount LFPAK,	View
	NX7002AKW,115	Nexperia USA Inc., N-Channel 60V 170mA (Ta) 220mW (Ta), 1.06W (Tc) Surface Mount SC-70,	View
	IRFS23N20DTRLP	Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View

SISH410DN-T1-GE3 - Tags

SISH410DN-T1-GE3 SISH410DN-T1-GE3 PDF SISH410DN-T1-GE3 datasheet SISH410DN-T1-GE3 specification SISH410DN-T1-GE3 image SISH410DN-T1-GE3 India Renesas Electronics India SISH410DN-T1-GE3 buy SISH410DN-T1-GE3 SISH410DN-T1-GE3 price SISH410DN-T1-GE3 distributor SISH410DN-T1-GE3 supplier SISH410DN-T1-GE3 wholesales