Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH410DN-T1-GE3

SISH410DN-T1-GE3

SISH410DN-T1-GE3

Part NumberSISH410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN PPAK 1212-8SH

DatasheetSISH410DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH410DN-T1-GE3.
We are offering SISH410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH410DN-T1-GE3 - Related Products

	DMG301NU-13	Diodes Incorporated, N-Channel 25V 260mA (Ta) 320mW (Ta) Surface Mount SOT-23,	View
	FCH47N60F-F133	ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-247-3, SuperFET™	View
	STB20N65M5	STMicroelectronics, N-Channel 650V 18A (Tc) 130W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	DMN3027LFG-7	Diodes Incorporated, N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	RFP70N06	ON Semiconductor, N-Channel 60V 70A (Tc) 150W (Tc) Through Hole TO-220-3,	View
	BSC0904NSIATMA1	Infineon Technologies, N-Channel 30V 20A (Ta), 78A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IXFP4N60P3	IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™	View
	BSC0901NSIATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	DMN5L06K-7	Diodes Incorporated, N-Channel 50V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	ZXMN3A03E6TA	Diodes Incorporated, N-Channel 30V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View
	IRFS4229TRLPBF	Infineon Technologies, N-Channel 250V 45A (Tc) 330W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®	View
	IRF620SPBF	Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK,	View

SISH410DN-T1-GE3 - Tags

SISH410DN-T1-GE3 SISH410DN-T1-GE3 PDF SISH410DN-T1-GE3 datasheet SISH410DN-T1-GE3 specification SISH410DN-T1-GE3 image SISH410DN-T1-GE3 India Renesas Electronics India SISH410DN-T1-GE3 buy SISH410DN-T1-GE3 SISH410DN-T1-GE3 price SISH410DN-T1-GE3 distributor SISH410DN-T1-GE3 supplier SISH410DN-T1-GE3 wholesales