Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH410DN-T1-GE3

SISH410DN-T1-GE3

SISH410DN-T1-GE3

Part NumberSISH410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN PPAK 1212-8SH

DatasheetSISH410DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH410DN-T1-GE3.
We are offering SISH410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH410DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH410DN-T1-GE3 - Related Products

	FDMS8320L	ON Semiconductor, N-Channel 40V 36A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	STD3NM60N	STMicroelectronics, N-Channel 600V 3.3A (Tc) 50W (Tc) Surface Mount DPAK, MDmesh™ II	View
	SI3458BDV-T1-E3	Vishay Siliconix, N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RE1C002UNTCL	Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
	FDD13AN06A0-F085	ON Semiconductor, N-Channel 60V 9.9A (Ta), 50A (Tc) 115W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, PowerTrench®	View
	IRF830STRLPBF	Vishay Siliconix, N-Channel 500V 4.5A (Tc) 74W (Tc) Surface Mount D2PAK,	View
	SIHH26N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	CMUDM7005 TR	Central Semiconductor Corp, N-Channel 20V 650mA (Ta) 300mW (Ta) Surface Mount SOT-523,	View
	IRF840STRLPBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	APT48M80L	Microsemi Corporation, N-Channel 800V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L],	View
	IPN60R1K5CEATMA1	Infineon Technologies, N-Channel 600V 5A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE	View
	CMPDM7003 TR	Central Semiconductor Corp, N-Channel 50V 280mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View

SISH410DN-T1-GE3 - Tags

SISH410DN-T1-GE3 SISH410DN-T1-GE3 PDF SISH410DN-T1-GE3 datasheet SISH410DN-T1-GE3 specification SISH410DN-T1-GE3 image SISH410DN-T1-GE3 India Renesas Electronics India SISH410DN-T1-GE3 buy SISH410DN-T1-GE3 SISH410DN-T1-GE3 price SISH410DN-T1-GE3 distributor SISH410DN-T1-GE3 supplier SISH410DN-T1-GE3 wholesales