Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH617DN-T1-GE3

SISH617DN-T1-GE3

SISH617DN-T1-GE3

Part NumberSISH617DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V POWERPAK 1212-

DatasheetSISH617DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH617DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH617DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH617DN-T1-GE3.
We are offering SISH617DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH617DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH617DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH617DN-T1-GE3 - Related Products

	SSM3J118TU(TE85L)	Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSII	View
	SI3483CDV-T1-GE3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	DMP2003UPS-13	Diodes Incorporated, P-Channel 20V 150A (Tc) 1.4W Surface Mount PowerDI5060-8,	View
	PMPB29XPEAX	Nexperia USA Inc., P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101, TrenchMOS™	View
	PMZB950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,	View
	PMV48XPAR	Nexperia USA Inc., P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	FDMA008P20LZ	ON Semiconductor, P-Channel 20V 12A (Ta) 2.4W (Ta) Surface Mount 6-PQFN (2x2),	View
	RW1A025APT2CR	Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT,	View
	DMPH1006UPSQ-13	Diodes Incorporated, P-Channel 12V 80A (Tc) 3.2W Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	SI7421DN-T1-E3	Vishay Siliconix, P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMP56D0UFB-7B	Diodes Incorporated, P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	SI4431CDY-T1-E3	Vishay Siliconix, P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SO, TrenchFET®	View

SISH617DN-T1-GE3 - Tags

SISH617DN-T1-GE3 SISH617DN-T1-GE3 PDF SISH617DN-T1-GE3 datasheet SISH617DN-T1-GE3 specification SISH617DN-T1-GE3 image SISH617DN-T1-GE3 India Renesas Electronics India SISH617DN-T1-GE3 buy SISH617DN-T1-GE3 SISH617DN-T1-GE3 price SISH617DN-T1-GE3 distributor SISH617DN-T1-GE3 supplier SISH617DN-T1-GE3 wholesales