SISH617DN-T1-GE3
SISH617DN-T1-GE3
Part Number SISH617DN-T1-GE3 Description MOSFET P-CHAN 30V POWERPAK 1212- Package / Case PowerPAK® 1212-8SHUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
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SISH617DN-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISH617DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.3mOhm @ 13.9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8SH Package / Case PowerPAK® 1212-8SH
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