Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS27DN-T1-GE3

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Part NumberSISS27DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A PPAK 1212-8S

DatasheetSiSS27DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS27DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS27DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS27DN-T1-GE3.
We are offering SISS27DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS27DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiSS27DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5250pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS27DN-T1-GE3 - Related Products

	IRFR9014TRPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	SPD30P06PGBTMA1	Infineon Technologies, P-Channel 60V 30A (Tc) 125W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	RD3H045SPTL1	Rohm Semiconductor, P-Channel 45V 4.5A (Ta) 15W (Tc) Surface Mount TO-252,	View
	SPP15P10PLHXKSA1	Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-TO220-3, SIPMOS®	View
	NTTFS3A08PZTWG	ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),	View
	STD36P4LLF6	STMicroelectronics, P-Channel 40V 36A (Tc) 60W (Tc) Surface Mount DPAK, STripFET™ F6	View
	SI7309DN-T1-E3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	AOD409	Alpha & Omega Semiconductor Inc., P-Channel 60V 26A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount TO-252, (D-Pak),	View
	RD3L050SNTL1	Rohm Semiconductor, N-Channel 60V 5A (Ta) 15W (Tc) Surface Mount TO-252,	View
	BSP316PH6327XTSA1	Infineon Technologies, P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	DMP21D0UFD-7	Diodes Incorporated, P-Channel 20V 820mA (Ta) 490mW (Ta) Surface Mount X1-DFN1212-3,	View

SISS27DN-T1-GE3 - Tags

SISS27DN-T1-GE3 SISS27DN-T1-GE3 PDF SISS27DN-T1-GE3 datasheet SISS27DN-T1-GE3 specification SISS27DN-T1-GE3 image SISS27DN-T1-GE3 India Renesas Electronics India SISS27DN-T1-GE3 buy SISS27DN-T1-GE3 SISS27DN-T1-GE3 price SISS27DN-T1-GE3 distributor SISS27DN-T1-GE3 supplier SISS27DN-T1-GE3 wholesales