Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS28DN-T1-GE3

SISS28DN-T1-GE3

SISS28DN-T1-GE3

Part NumberSISS28DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAK1212

DatasheetSISS28DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS28DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS28DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS28DN-T1-GE3.
We are offering SISS28DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS28DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS28DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3640pF @ 10V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS28DN-T1-GE3 - Related Products

	SIHW33N60E-GE3	Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD,	View
	SSM6K361NU,LF	Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	SIHB22N60ET1-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),	View
	PMZ1000UN,315	Nexperia USA Inc., N-Channel 30V 480mA (Ta) 350mW (Ta) Surface Mount DFN1006-3,	View
	PSMN012-60YS,115	Nexperia USA Inc., N-Channel 60V 59A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STL135N8F7AG	STMicroelectronics, N-Channel 80V 130A (Tc) 4.8W (Ta), 135W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F7	View
	IRFR220NTRPBF	Infineon Technologies, N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak, HEXFET®	View
	DMN2046U-7	Diodes Incorporated, N-Channel 20V 3.4A (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	TK7P65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 6.8A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV	View
	IXTQ36N30P	IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-3P, PolarHT™	View
	IPAN70R750P7SXKSA1	Infineon Technologies, N-Channel 700V 6.5A (Tc) 20.8W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	MMBF170Q-7-F	Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View

SISS28DN-T1-GE3 - Tags

SISS28DN-T1-GE3 SISS28DN-T1-GE3 PDF SISS28DN-T1-GE3 datasheet SISS28DN-T1-GE3 specification SISS28DN-T1-GE3 image SISS28DN-T1-GE3 India Renesas Electronics India SISS28DN-T1-GE3 buy SISS28DN-T1-GE3 SISS28DN-T1-GE3 price SISS28DN-T1-GE3 distributor SISS28DN-T1-GE3 supplier SISS28DN-T1-GE3 wholesales