SISS28DN-T1-GE3
SISS28DN-T1-GE3
Part Number SISS28DN-T1-GE3 Description MOSFET N-CH 25V 60A POWERPAK1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS28DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS28DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS28DN-T1-GE3.
We are offering SISS28DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS28DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS28DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.52mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3640pF @ 10V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS28DN-T1-GE3 - Related ProductsMore >>
SI7308DN-T1-E3 Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FQP6N90C ON Semiconductor, N-Channel 900V 6A (Tc) 167W (Tc) Through Hole TO-220-3, QFET®
View
RUE002N02TL Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,
View
STS7NF60L STMicroelectronics, N-Channel 60V 7.5A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II
View
IRFH5406TRPBF Infineon Technologies, N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®
View
STW23N85K5 STMicroelectronics, N-Channel 850V 19A (Tc) 250W (Tc) Through Hole TO-247, SuperMESH5™
View
IRF2807ZPBF Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
View
PSMN8R0-40BS,118 Nexperia USA Inc., N-Channel 40V 77A (Tc) 86W (Tc) Surface Mount D2PAK,
View
R6024ENX Rohm Semiconductor, N-Channel 600V 24A (Tc) 40W (Tc) Through Hole TO-220FM,
View
FDME820NZT ON Semiconductor, N-Channel 20V 9A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®
View
FDP2614 ON Semiconductor, N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3, PowerTrench®
View
IPP60R600P7XKSA1 Infineon Technologies, N-Channel 650V 6A (Tc) 30W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
View
SISS28DN-T1-GE3 - Tags
English
