SISS61DN-T1-GE3


SISS61DN-T1-GE3

Part NumberSISS61DN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SISS61DN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs231nC @ 10V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds8740pF @ 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S
Package / CasePowerPAK® 1212-8S

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