SISS70DN-T1-GE3
SISS70DN-T1-GE3
Part Number SISS70DN-T1-GE3 Description MOSFET N-CH 125V Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS70DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS70DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS70DN-T1-GE3.
We are offering SISS70DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS70DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS70DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 125V Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29.8mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 535pF @ 62.5V FET Feature - Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS70DN-T1-GE3 - Related ProductsMore >>
STU3N80K5 STMicroelectronics, N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole I-PAK, SuperMESH5™
View
IRFL4310TRPBF Infineon Technologies, N-Channel 100V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
SSM3K361TU,LF Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.8W (Ta) Surface Mount UFM, U-MOSVIII-H
View
NVMFS5C404NLWFAFT1G ON Semiconductor, N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
View
TN2425N8-G Microchip Technology, N-Channel 25V 480mA (Tj) 1.6W (Tc) Surface Mount SOT-89-3,
View
STD16NF06LT4 STMicroelectronics, N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II
View
HUF75345S3ST ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™
View
R6025ANZC8 Rohm Semiconductor, N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-3PF,
View
FQP3N60C ON Semiconductor, N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3, QFET®
View
IRL7472L1TRPBF Infineon Technologies, N-Channel 40V 375A (Tc) 3.8W (Ta), 341W (Tc) Surface Mount DIRECTFET L8, StrongIRFET™
View
IRF7413ZTRPBF Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IPW60R070CFD7XKSA1 Infineon Technologies, N-Channel 650V 31A (Tc) 156W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7
View
SISS70DN-T1-GE3 - Tags
English
