SIUD412ED-T1-GE3
SIUD412ED-T1-GE3
Part Number SIUD412ED-T1-GE3
Description MOSFET N-CH 12V 500MA PWRPAK0806
Package / Case PowerPAK® 0806
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806
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SIUD412ED-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIUD412ED
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.71nC @ 4.5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 6V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 0806
Package / Case PowerPAK® 0806
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