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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIZF906ADT
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual), Schottky
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V, 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V
Power - Max 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
SIZF300DT-T1-GE3
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FDMD84100
ON Semiconductor, Mosfet Array 2 N-Channel (Dual) Common Source 100V 7A 2.1W Surface Mount Power 3.3x5, PowerTrench®
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SQJ202EP-T1_GE3
Vishay Siliconix, Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric, Automotive, AEC-Q101, TrenchFET®
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