SMMJT350T3G


SMMJT350T3G

Part NumberSMMJT350T3G

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SMMJT350T3G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package4000
ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)300V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max2.75W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

SMMJT350T3G - Tags

SMMJT350T3G SMMJT350T3G PDF SMMJT350T3G datasheet SMMJT350T3G specification SMMJT350T3G image SMMJT350T3G India Renesas Electronics India SMMJT350T3G buy SMMJT350T3G SMMJT350T3G price SMMJT350T3G distributor SMMJT350T3G supplier SMMJT350T3G wholesales